p-typedoping相关论文
通过基于密度泛函理论的第一性原理计算,研究了Mg单掺杂、N单掺杂和不同浓度的Mg-N共掺杂β-Ga2 O3的结构性质、电子性质和光学性......
为了实现对Li—N共掺杂p型ZnO薄膜的形成机制以及其稳定p型导电原因的揭示,利用X射线光电子谱及基于同步辐射光源的X射线吸收精细......
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Synthesis of Boron-doped Graphene Monolayer Using the Sole Solid Feedstock by Chemical Vapor Deposit
Substitutional doping with heteroatoms provides an effective route to tailor the electronic properties of graphene and e......
The direct observation of dopant configurations in semiconductor nanowires is possible using a STEM with in situ heating......
采用基于密度泛函理论的第一性原理超软赝势方法的DMol3软件，对ZnO纳米线表面在非H钝化和H钝化两种情况，及N原子掺入位置不同的情况......
Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,A1 and Ga,......
